features trenchfet power mosfet 175 c junction temperature optimized for low-side synchronous rectifier applications synchronous buck dc/dc conversion - desktop - server SUM85N02-05P vishay siliconix new product document number: 72101 s-22523?rev. a, 27-jan-03 www.vishay.com 1 n-channel 20-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) a 0.005 @ v gs = 10 v 85 20 0.0083 @ v gs = 4.5 v 85 d g s n-channel mosfet drain connected to tab to-263 s d g top view SUM85N02-05P absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 gate-source voltage v gs 20 v t c = 25 c 85 a continuous drain current (t j = 175 c) t c = 100 c i d 77 a pulsed drain current i dm 160 t c = 25 c 107 c maximum power dissipation b t a = 25 c p d 3.75 w operating junction and storage temperature range t j , t stg -55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount (to-263) d r thja 40 junction-to-case r thjc 1.4 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
SUM85N02-05P vishay siliconix new product www.vishay.com 2 document number: 72101 s-22523 ? rev. a, 27-jan-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 16 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 20 a 0.0041 0.005 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 125 c 0.007 drain-source on-state resistance r ds(on) v gs = 4.5 v, i d = 20 a 0.0064 0.0083 forward transconductance b g fs v ds = 15 v, i d = 20 a 15 s dynamic a input capacitance c iss 2550 output capacitance c oss v gs = 0 v, v ds = 10 v, f = 1 mhz 900 pf reverse transfer capacitance c rss 415 gate resistance r g 1.5 total gate charge c q g 19 30 gate-source charge c q gs v ds = 10 v, v gs = 4.5 v, i d = 50 a 7.5 nc gate-drain charge c q gd v ds = 10 v, v gs = 4.5 v, i d = 50 a 6.0 nc turn-on delay time c t d(on) 11 20 rise time c t r v dd = 10 v, r l = 0.2 10 15 turn-off delay time c t d(off) v dd = 10 v, r l = 0.2 i d 50 a, v gen = 10 v, r g = 2.5 24 35 ns fall time c t f 9 15 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 50 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 35 70 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. typical characteristics (25 c unless noted) 0 20 40 60 80 100 120 140 160 0246810 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 25 c -55 c 2 v t c = 125 c v gs = 10 thru 5 v 3 v 4 v
SUM85N02-05P vishay siliconix new product document number: 72101 s-22523 ? rev. a, 27-jan-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.002 0.004 0.006 0.008 0.010 0 20406080100 0 2 4 6 8 10 0 8 16 24 32 40 0 20 40 60 80 100 0 1020304050 0 500 1000 1500 2000 2500 3000 3500 048121620 capacitance gate charge transconductance on-resistance vs. drain current - gate-to-source voltage (v) - on-resistance ( q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) r ds(on) ) v gs - transconductance (s) g fs v ds = 10 v i d = 50 a v gs = 10 v v gs = 4.5 v c rss t c = -55 c 25 c 125 c c iss i d - drain current (a) c oss (normalized) - on-resistance ( r ds(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j - junction temperature ( c) v sd - source-to-drain voltage (v) - source current (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 0 10 v gs = 6.3 v
SUM85N02-05P vishay siliconix new product www.vishay.com 4 document number: 72101 s-22523 ? rev. a, 27-jan-03 thermal ratings 0 20 40 60 80 100 0 25 50 75 100 125 150 175 maximum drain current vs. ambiemt t emperature t a - ambient temperature ( c) - drain current (a) i d 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 110 0.2 0.1 duty cycle = 0.5 100 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.05 0.02 single pulse drain source breakdown vs. junction t emperature 20 22 24 26 28 30 -50 -25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) (v) v (br)dss safe operating area v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse - drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s 1
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